Gallium nitride (GaN)
Wide-bandgap (3.4 eV) semiconductor enabling blue LEDs and high-frequency, high-power electronics.
Typical properties
Published ranges for the usual condition. Heat treatment, section size and product form move these numbers — a starting point for a search, not design allowables.
Where it sits in the field
Where it is used
LEDs, laser diodes, fast chargers, RF amplifiers, EV inverters.
Processing and joining
MOCVD epitaxy on sapphire/SiC/Si; GaN-on-Si for power devices.
Class behaviour
Gallium nitride (GaN) is a semiconductors & functional materials material: covalent (si, gaas) or ionic-covalent; band gap defines electronic behavior.
That bonding is what produces the class-level trade-off you inherit here — tunable electronic/optical properties via doping and heterostructures, set against brittle; extreme purity/processing requirements.
At a glance
- Category
- Semiconductors & Functional
- Subcategory
- Wide-bandgap semiconductor
- Class
- Semiconductors & Functional Materials
- Reference
- gan
Compare with
- Monocrystalline silicon
Elemental semiconductor - PZT (lead zirconate titanate)
Piezoelectric ceramic - NdFeB (N42–N52)
Hard magnetic material
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